? semiconductor components industries, llc, 2012 may, 2012 ? rev. 1 1 publication order number: NTSV20U100CT/d NTSV20U100CT very low forward voltage trench-based schottky rectifier exceptionally low v f = 0.485 v at i f = 5 a features ? fine lithography trench ? based schottky technology for very low forward voltage and low leakage ? fast switching with exceptional temperature stability ? low power loss and lower operating temperature ? higher efficiency for achieving regulatory compliance ? low thermal resistance ? high surge capability ? these devices are pb ? free, halogen free/bfr free and are rohs compliant typical applications ? switching power supplies including notebook / netbook adapters, atx and flat panel display ? high frequency and dc ? dc converters ? freewheeling and or ? ing diodes ? reverse battery protection ? instrumentation mechanical characteristics ? case: epoxy, molded ? epoxy meets flammability rating ul 94 ? 0 @ 0.125 in ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c maximum for 10 sec to ? 220ab case 221a style 6 3 4 1 1 3 2, 4 2 marking diagram ay ww tsv20u10cg aka a = assembly location y = year ww = work week aka = polarity designator g = pb ? free package http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information pin connections
NTSV20U100CT http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r , t c = 115 c) per device per diode i f(av) 20 10 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 110 c) per device per diode i frm 40 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a operating junction temperature t j ? 40 to +150 c storage temperature t stg ? 40 to +150 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics rating symbol value unit maximum thermal resistance junction ? to ? case junction ? to ? ambient r jc r ja 2.0 70 c/w c/w electrical characteristics (per leg unless otherwise noted) rating symbol typ max unit maximum instantaneous forward voltage (note 1) (i f = 5 a, t j = 25 c) (i f = 10 a, t j = 25 c) (i f = 5 a, t j = 125 c) (i f = 10 a, t j = 125 c) v f 0.520 0.658 0.485 0.593 ? 0.98 ? 0.82 v maximum instantaneous reverse current (note 1) (v r = 70 v, t j = 25 c) (v r = 70 v, t j = 125 c) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r 9.6 7.0 63.2 18.0 800 25 a ma a ma 1. pulse test: pulse width = 300 s, duty cycle 2.0% ordering information device package shipping NTSV20U100CTg to ? 220ab (pb ? free) 50 units / rail
NTSV20U100CT http://onsemi.com 3 typical characteristics figure 1. typical instantaneous forward characteristics figure 2. typical reverse characteristics v f , instantaneous forward voltage (v) v r , instantaneous reverse voltage (v) 1.6 1.4 1.2 1.0 0.6 0.4 0.2 0 0.1 1 10 100 90 80 70 60 50 40 30 20 0.001 0.01 0.1 1 10 100 figure 3. typical junction capacitance figure 4. current derating per leg v r , reverse voltage (v) t c , case temperature ( c) 100 10 1 0.1 10 100 1000 10,000 100 80 60 120 40 20 0 0 5 10 15 20 figure 5. current derating figure 6. forward power dissipation t c , case temperature ( c) i f(av) , average forward current (a) 140 120 100 80 60 40 20 0 0 5 10 25 35 40 14 12 10 6 4 2 0 0 2 10 12 14 16 20 i f , instantaneous forward current (a) i r , instantaneous reverse current (ma) c, junction capacitance (pf) i f(av) , average forward current (a) i f(av) , average forward current (a) p f(av) , average forward power dissipation (w) 0.8 1.8 t a = 25 c t a = 125 c t a = 150 c 100 t a = 25 c t a = 125 c t a = 150 c t j = 25 c 140 square wave dc r jc = 1.3 c/w 15 20 30 square wave dc r jc = 1.3 c/w t j = 150 c square wave dc 8 i pk /i av = 20 i pk /i av = 10 i pk /i av = 5 4 6 8 18
NTSV20U100CT http://onsemi.com 4 typical characteristics figure 7. typical transient thermal response t, pulse time (sec) 0.01 0.001 0.1 0.0001 0.00001 0.000001 0.01 0.1 1 10 r(t), typical transient thermal resistance ( c/w) 1 10 100 1000 single pulse 20% 50% 10% 5% 2% 1% p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
NTSV20U100CT http://onsemi.com 5 package dimensions to ? 220 case 221a ? 09 issue ag style 6: pin 1. anode 2. cathode 3. anode 4. cathode notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.036 0.64 0.91 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. NTSV20U100CT/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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